dmp4025lk3 document number:35938 rev. 3 - 2 1 of 8 www.diodes.com march 2014 ? diodes incorporated advance information dmp4025lk3 40v p-channel enhanc ement mode mosfet product summary bv dss r ds(on) max i d max t a = +25c (note 6) -40v 25m ? @ v gs = -10v -8.6a 45m ? @ v gs = -4.5v -7.0a description this mosfet has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? motor control ? backlighting ? dc-dc converters ? printer equipment features ? low on-resistance ? fast switching speed ? low input/output leakage ? lead-free finish; rohs compliant (note 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: to252 (dpak) ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 (note 1) ? moisture sensitivity: level 1 per j-std-020 ? terminals connections: see diagram below ? terminals: finish - matte tin annealed over copper lead frame. solderable per mil-std-202, method 208 ? weight: 0.315 grams (approximate) ordering information (note 4) product marking reel size (inches) tape width (mm) quantity per reel dmp4025lk3-13 p4025l 13 16 2,500 notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (roh s 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. marking information top view to252 top view pin out device symbol = manufacturer?s marking p4025l = product type marking code yyww = date code marking yy = year (ex: 10 = 2010) ww = week (01 - 53) yyww p4025l
dmp4025lk3 document number:35938 rev. 3 - 2 2 of 8 www.diodes.com march 2014 ? diodes incorporated advance information dmp4025lk3 maximum ratings (@t a = +25c unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -40 v gate-source voltage v gss ? 20 continuous drain current v gs = -10v (notes 6) i d -8.6 a t a = +70c (notes 6) -6.9 (notes 5) -6.7 pulsed drain current v gs = -10v (notes 7) i dm -35 continuous source current (body diode) (notes 7) i s -8.6 pulsed source current (body diode) (notes 7) i sm -35 thermal characteristics (@t a = +25c unless otherwise specified.) characteristic symbol value unit power dissipation (notes 5) p d 1.7 w (notes 6) 2.78 thermal resistance, junction to ambient (notes 5) r ja 74 c/w (notes 6) 45 thermal resistance, junction to case (notes 6) r jc 7.1 thermal resistance, junction to lead (notes 8) r jl 1.43 operating and storage temperature range t j, t stg -55 to +150 c notes: 5. for a device surface mounted on minimum recommended fr4 pcb with high coverage of single sided 1oz copper, in still a ir conditions; the device is measured when operating in a steady-state condition. 6. same as note (5), except the device is surface mounted on 25mm x 25mm x 1.6mm fr4 pcb. 7. repetitive rating on 25mm x 25mm fr4 pcb, d=0.02, pulse width 300s ? pulse width by maximum junction temperature. 8. thermal resistance from junction to so lder-point (at the end of the drain lead).
dmp4025lk3 document number:35938 rev. 3 - 2 3 of 8 www.diodes.com march 2014 ? diodes incorporated advance information dmp4025lk3 thermal characteristics 0 20406080100120140160 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 p , p o we r dissi p a t i o n (w) d t , ambient temperature (c) figure 1. power dissipation vs. ambient temperature a t1, pulse duration time (sec) figure 2. single pulse maximum power dissipation 0.001 0.01 0.1 1 10 100 1,000 0.0001 0 10 20 30 40 50 60 70 80 90 100 p , p e ak t r an s i e n t p o iw e r (w) (pk) single pulse r = 70c/w r = r * r t - t = p * r ? ?? ? ja ja(t) (t) ja ja ja(t) ? 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) figure 3. transient thermal resistance 0.001 0.01 0.1 r(t), t r ansien t t h e r mal r esis t an c e 1 r (t) = r(t) * r r = 70c/w duty cycle, d = t1/ t2 ?? ? ja ja ja d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse
dmp4025lk3 document number:35938 rev. 3 - 2 4 of 8 www.diodes.com march 2014 ? diodes incorporated advance information dmp4025lk3 electrical characteristics (@t a = +25c unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss -40 ? ? v i d = -250a, v gs = 0v zero gate voltage drain current i dss ? ? -1 a v ds = -40v, v gs = 0v gate-source leakage i gss ? ? ? 100 na v gs = ? 20v, v ds = 0v on characteristics gate threshold voltage v gs(th) -0.8 -1.3 -1.8 v i d = -250a, v ds = v gs static drain-source on-resistance (note 9) r ds (on) ? 18 25 m ? v gs = -10v, i d = -3a 30 45 v gs = -4.5v, i d = -3a forward transconductance (notes 9 & 10) g fs ? 16.6 ? s v ds = -5v, i d = -3a diode forward voltage (note 9) v sd ? -0.7 -1 v i s = -1a, v gs = 0v dynamic characteristics (note 10) input capacitance c iss ? 1643 ? pf v ds = -20v, v gs = 0v f = 1mhz output capacitance c oss ? 179 ? reverse transfer capacitance c rss ? 128 ? gate resistance r g ?? 6.43 ?? ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (note 11) q g ?? 14 ?? nc v gs = -4.5v v ds = -20v i d = -3a total gate charge (note 11) q g ? 33.7 ? v gs = -10v gate-source charge (note 11) q gs ? 5.5 ? gate-drain charge (note 11) q gd ? 7.3 ? turn-on delay time (note 11) t d(on) ? 6.9 ? ns v dd = -20v, v gs = -10v i d = -3a turn-on rise time (note 11) t r ? 14.7 ? turn-off delay time (note 11) t d(off) ? 53.7 ? turn-off fall time (note 11) t f ? 30.9 ? notes: 9. measured under pulsed conditions. pulse width ? 300s; duty cycle ? 2%. 10. for design aid only, not subject to production testing. 11. switching characteristics are independent of operating junction temperatures. typical characteristics 0 0.5 1 1.5 2 figure 4. typical output characteristic -v , drain-source voltage (v) ds 0 5 10 15 20 25 30 -i , d r ai n c u r r e n t (a) d 01 2 345 figure 5. typical transfer characteristic -v , gate-source voltage (v) gs 0 5 10 15 20 25 30 -i , d r ain c u r r en t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -5v ds
dmp4025lk3 document number:35938 rev. 3 - 2 5 of 8 www.diodes.com march 2014 ? diodes incorporated advance information dmp4025lk3 0 5 10 15 20 25 30 figure 6. typical on-resistance vs. drain current and gate voltage -i , drain-source current (a) d 0 0.01 0.02 0.03 0.04 0.05 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? v = -4.5v gs v = -10v gs 0 5 10 15 20 25 30 -i , drain current (a) d figure 7. typical on-resistance vs. drain current and temperature 0 0.01 0.02 0.03 0.04 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -10v gs figure 8. on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.5 0.7 0.9 1.1 1.3 1.5 1. 7 r , d r ain-s o u r c e on-resistance (normalized) dson v = -10v i = -20a gs d v = -4.5v i = -10a gs d figure 9. on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.01 0.02 0.03 0.04 0.05 0.06 r , d r ain-s o u r c e o n- r esis t an c e ( ) dson ? v = -10v i = -20a gs d v = -4.5v i = -10a gs d 0 0.5 1.0 1.5 2.0 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a figure 10. gate threshold variation vs. ambient temperature -v , g ate t h r es h o ld v o lta g e (v) gs(th) i = -250a d i = -1ma d 0.2 0.4 0.6 0.8 1.0 1.2 figure 11. diode forward voltage vs. current -v , source-drain voltage (v) sd 0 2 4 6 8 10 12 14 16 18 20 -i , s o u r c e c u r r en t (a) s t = 25c a
dmp4025lk3 document number:35938 rev. 3 - 2 6 of 8 www.diodes.com march 2014 ? diodes incorporated advance information dmp4025lk3 0 5 10 15 20 25 30 figure 12. typical total capacitance -v , drain-source voltage (v) ds 10 100 1,000 10,000 c , c a p a c i t an c e (p f ) c iss c rss c oss 0 5 10 15 20 25 30 35 40 figure 13. typical leakage current vs. drain-source voltage -v , drain-source voltage (v) ds 1 10 100 10,000 -i , leaka g e c u r r e n t (na) dss 1,000 t = 25c a t = 85c a t = 125c a t = 150c a 0 5 10 15 20 25 30 35 40 figure 14. gate-charge characteristics q , total gate charge (nc) g 0 2 4 6 8 10 -v , g a t e-s o u r c e v o l t a g e (v) gs v = -20v i = -12a ds d 0.01 0.1 1 10 100 -i , d r ain c u r r en t (a) d r limited ds(on) t = 150c t = +25c j(max) a v = 10v single pulse gs dut on 1 * mrp board p = 100s w p = 1ms w p = 10ms w p = 100ms w p = 1s w p = 10s w dc 0.1 1 10 100 -v , drain-source voltage (v) figure 15. soa, safe operation area ds
dmp4025lk3 document number:35938 rev. 3 - 2 7 of 8 www.diodes.com march 2014 ? diodes incorporated advance information dmp4025lk3 package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. to252 dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 ? ? e ? ? 2.286 e 6.45 6.70 6.58 e1 4.32 ? ? h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 ? all dimensions in mm dimensions value (in mm) z 11.6 x1 1.5 x2 7.0 y1 2.5 y2 7.0 c 6.9 e1 2.3 b3 e 2x b2 d l4 a c2 e a1 l l3 3x b a h a2 e1 x2 c z x1 y1 e1 y2
dmp4025lk3 document number:35938 rev. 3 - 2 8 of 8 www.diodes.com march 2014 ? diodes incorporated advance information dmp4025lk3 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2014, diodes incorporated www.diodes.com
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